Electrical metastabilities in chalcogenide photovoltaic devices
Identifieur interne : 000D94 ( Main/Repository ); précédent : 000D93; suivant : 000D95Electrical metastabilities in chalcogenide photovoltaic devices
Auteurs : RBID : Pascal:13-0229221Descripteurs français
- Pascal (Inist)
- Dispositif photovoltaïque, Propriété électrique, Couche mince, Etat métastable, Semiconducteur II-VI, Effet photoinduit, Caractéristique courant tension, Dépendance température, Eclairement, Gallium, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Temps relaxation, Chalcogénure, Tellurure de cadmium, Chalcopyrite, Composé organique volatil, Cuivre, CdTe, 8460J, 7350, 8105D, 7361.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
- Cadmium tellurides, Chalcogenides, Chalcopyrite, Copper, Copper selenides, Electrical properties, Gallium, Gallium selenides, II-VI semiconductors, Illumination, Indium selenides, Metastable state, Photoinduced effect, Photovoltaic cell, Relaxation time, Temperature dependence, Thin film, Volatile organic compound, Voltage current curve.
Abstract
Electrical properties of thin film photovoltaic modules exhibit metastable behavior when exposed to light, when kept in the dark after light exposure and as a result of external bias. These effects vary in magnitude and expression and can mainly be observed in CdTe and chalcopyrites. The light-soaking induced effect in these technologies was analyzed for electrical module parameters such as open circuit voltage (Voc), short circuit current, fill factor (FF), maximum power point (Pmpp) and the current-voltage characteristic slope at Voc. The influence of the light-soaking irradiance and the duration of the illumination at constant temperature was investigated. Furthermore, light-soaking with additional external bias was examined. Overall, all modules showed metastable behavior with increases in the FF, the Voc and the Pmpp after light-soaking. The magnitude varied for different technologies and was largest for the investigated CdTe modules. Differences among the technologies could be observed for the change in Voc. While CdTe exhibited a significant increase in both FF and Voc, Cu(In,Ga)Se2 (CIGS) modules mainly showed an increase in the FF. Differences in metastable behavior were also observed for relaxation times in the dark. While CdTe modules returned to the initial levels in several hours, it took several weeks for the CIGS modules to relax. The presented experiments confirm that metastabilities reported on cell behavior also occur at the module level. .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical metastabilities in chalcogenide photovoltaic devices</title><author><name sortKey="Novalin, Sabrina" uniqKey="Novalin S">Sabrina Novalin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Austrian Institute of Technology, Energy Department, Giefinggasse 2</s1><s2>1210 Wien</s2><s3>AUT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1210 Wien</wicri:noRegion></affiliation></author><author><name sortKey="Rennhofer, Marcus" uniqKey="Rennhofer M">Marcus Rennhofer</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Austrian Institute of Technology, Energy Department, Giefinggasse 2</s1><s2>1210 Wien</s2><s3>AUT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1210 Wien</wicri:noRegion></affiliation></author><author><name sortKey="Summhammer, Johann" uniqKey="Summhammer J">Johann Summhammer</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Atominstitut of the Austrian Universities, Stadionallee 2</s1><s2>1020 Wien</s2><s3>AUT</s3><sZ>3 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1020 Wien</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229221</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229221 INIST</idno><idno type="RBID">Pascal:13-0229221</idno><idno type="wicri:Area/Main/Corpus">000B12</idno><idno type="wicri:Area/Main/Repository">000D94</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium tellurides</term><term>Chalcogenides</term><term>Chalcopyrite</term><term>Copper</term><term>Copper selenides</term><term>Electrical properties</term><term>Gallium</term><term>Gallium selenides</term><term>II-VI semiconductors</term><term>Illumination</term><term>Indium selenides</term><term>Metastable state</term><term>Photoinduced effect</term><term>Photovoltaic cell</term><term>Relaxation time</term><term>Temperature dependence</term><term>Thin film</term><term>Volatile organic compound</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif photovoltaïque</term><term>Propriété électrique</term><term>Couche mince</term><term>Etat métastable</term><term>Semiconducteur II-VI</term><term>Effet photoinduit</term><term>Caractéristique courant tension</term><term>Dépendance température</term><term>Eclairement</term><term>Gallium</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Temps relaxation</term><term>Chalcogénure</term><term>Tellurure de cadmium</term><term>Chalcopyrite</term><term>Composé organique volatil</term><term>Cuivre</term><term>CdTe</term><term>8460J</term><term>7350</term><term>8105D</term><term>7361</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electrical properties of thin film photovoltaic modules exhibit metastable behavior when exposed to light, when kept in the dark after light exposure and as a result of external bias. These effects vary in magnitude and expression and can mainly be observed in CdTe and chalcopyrites. The light-soaking induced effect in these technologies was analyzed for electrical module parameters such as open circuit voltage (V<sub>oc</sub>), short circuit current, fill factor (FF), maximum power point (P<sub>mpp</sub>) and the current-voltage characteristic slope at V<sub>oc</sub>. The influence of the light-soaking irradiance and the duration of the illumination at constant temperature was investigated. Furthermore, light-soaking with additional external bias was examined. Overall, all modules showed metastable behavior with increases in the FF, the V<sub>oc</sub> and the P<sub>mpp</sub> after light-soaking. The magnitude varied for different technologies and was largest for the investigated CdTe modules. Differences among the technologies could be observed for the change in V<sub>oc</sub>. While CdTe exhibited a significant increase in both FF and V<sub>oc</sub>, Cu(In,Ga)Se<sub>2</sub> (CIGS) modules mainly showed an increase in the FF. Differences in metastable behavior were also observed for relaxation times in the dark. While CdTe modules returned to the initial levels in several hours, it took several weeks for the CIGS modules to relax. The presented experiments confirm that metastabilities reported on cell behavior also occur at the module level. .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Electrical metastabilities in chalcogenide photovoltaic devices</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>NOVALIN (Sabrina)</s1></fA11><fA11 i1="02" i2="1"><s1>RENNHOFER (Marcus)</s1></fA11><fA11 i1="03" i2="1"><s1>SUMMHAMMER (Johann)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Austrian Institute of Technology, Energy Department, Giefinggasse 2</s1><s2>1210 Wien</s2><s3>AUT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Atominstitut of the Austrian Universities, Stadionallee 2</s1><s2>1020 Wien</s2><s3>AUT</s3><sZ>3 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>261-264</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550570</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>8 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229221</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Electrical properties of thin film photovoltaic modules exhibit metastable behavior when exposed to light, when kept in the dark after light exposure and as a result of external bias. These effects vary in magnitude and expression and can mainly be observed in CdTe and chalcopyrites. The light-soaking induced effect in these technologies was analyzed for electrical module parameters such as open circuit voltage (V<sub>oc</sub>), short circuit current, fill factor (FF), maximum power point (P<sub>mpp</sub>) and the current-voltage characteristic slope at V<sub>oc</sub>. The influence of the light-soaking irradiance and the duration of the illumination at constant temperature was investigated. Furthermore, light-soaking with additional external bias was examined. Overall, all modules showed metastable behavior with increases in the FF, the V<sub>oc</sub> and the P<sub>mpp</sub> after light-soaking. The magnitude varied for different technologies and was largest for the investigated CdTe modules. Differences among the technologies could be observed for the change in V<sub>oc</sub>. While CdTe exhibited a significant increase in both FF and V<sub>oc</sub>, Cu(In,Ga)Se<sub>2</sub> (CIGS) modules mainly showed an increase in the FF. Differences in metastable behavior were also observed for relaxation times in the dark. While CdTe modules returned to the initial levels in several hours, it took several weeks for the CIGS modules to relax. The presented experiments confirm that metastabilities reported on cell behavior also occur at the module level. .</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Propriété électrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Electrical properties</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Propiedad eléctrica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Couche mince</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Thin film</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Capa fina</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Etat métastable</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Metastable state</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Estado metastable</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Effet photoinduit</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Photoinduced effect</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Efecto fotoinducido</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dépendance température</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Eclairement</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Illumination</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Alumbrado</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Galio</s0><s2>NC</s2><s2>FX</s2><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Temps relaxation</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Relaxation time</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Tiempo relajación</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Chalcogénure</s0><s2>NA</s2><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Chalcogenides</s0><s2>NA</s2><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Calcogenuro</s0><s2>NA</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Tellurure de cadmium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Cadmium tellurides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Calcopirita</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé organique volatil</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Volatile organic compound</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto orgánico volátil</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>CdTe</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>7350</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>8105D</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>7361</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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